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Si7129DN
Vishay Siliconix
P-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
- 30
R DS(on) ( Ω )
0.0114 at V GS = - 10 V
0.0200 at V GS = - 4.5V
I D (A) e,f
- 35
- 35
Q g (Typ.)
24.6 nC
? Halogen-free According to IEC 61249-2-21
Definition
? TrenchFET ? Power MOSFET
? Low Thermal Resistance PowerPAK ?
Package with Small Size and Low 1.07 mm
Profile
? 100 % R g and UIS Tested
? Compliant to RoHS Directive 2002/95/EC
PowerPAK 1212-8
APPLICATIONS
? Load Switch
3.30 mm
1
S
S
3.30 mm
? Adaptor Switch
? Notebook PC
S
2
3
S
4
G
8
D
7
D
6
D
D
G
5
Bottom V ie w
Orderin g Information: Si7129D N -T1-GE3 (Lead (P b )-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (T A = 25 °C, unless otherwise note d)
D
P-Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
- 30
± 20
- 35 e
Unit
V
Continuous Drain Current (T J = 150 °C)
T C = 70 °C
T A = 25 °C
I D
- 35 e
- 14.4 a, b
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
T A = 70 °C
T C = 25 °C
T A = 25 °C
L = 0.1 mH
I DM
I S
I AS
E AS
- 11.5 a, b
- 60
- 35 e
- 3.2 a, b
- 25
31.25
A
mJ
T C = 25 °C
52.1
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
3.3
3.8 a, b
W
T A = 70 °C
2.4 a, b
Soldering Recommendations (Peak Temperature)
Operating Junction and Storage Temperature Range
c, d
T J , T stg
- 50 to 150
260
°C
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See solder profile ( www.vishay.com/ppg?73257 ). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Package limited.
f. Based on T C = 25 °C
Document Number: 68966
S10-2023-Rev. B, 06-Sep-10
www.vishay.com
1
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